N-Channel Power MOSFET featuring 500V Drain to Source Voltage (Vdss) and 20A Continuous Drain Current (ID). This silicon Metal-oxide Semiconductor FET offers a low 270mR Drain to Source Resistance (Rds On Max) and a maximum power dissipation of 260W. Designed for through-hole mounting in a TO-247AD package, it operates within a temperature range of -55°C to 150°C. Key electrical characteristics include a 65ns fall time and 85ns turn-off delay time.
PackageTO-247AD
Current Rating20A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IRFP460 technical specifications.
General
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 20A |
| Current Rating | 20A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 270mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 65ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 260W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 260W |
| Radiation Hardening | No |
| Rds On Max | 270mR |
| RoHS Compliant | Yes |
| Series | MegaMOS™ |
| Turn-Off Delay Time | 85ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IRFP460 Datasheet
Download the complete datasheet for Ixys IRFP460 to view detailed technical specifications.
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