IRFP470

Power Field-Effect Transistor, 24A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN

PackageTO-247AD

MountingThrough Hole

PolarityN-CHANNEL

Power300W

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Ixys IRFP470 technical specifications.

Package/Case	TO-247AD
Continuous Drain Current (ID)	24A
Drain to Source Breakdown Voltage	500V
Drain to Source Resistance	230mR
Drain to Source Voltage (Vdss)	500V
Fall Time	30ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	4.2nF
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	300W
Mount	Through Hole
Package Quantity	30
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	300W
Rds On Max	230mR
RoHS Compliant	Yes
Series	MegaMOS™
Turn-Off Delay Time	65ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.