The IX2R11S3T/R is a dual gate driver IC from Ixys, featuring a maximum output current of 2A and a maximum power dissipation of 1.25W. It operates over a temperature range of -40°C to 125°C and is packaged in a SOIC package. The device has a propagation delay of 120ns and a fall time of 22ns. It is suitable for surface mount applications and is available in a rail/tube packaging with a quantity of 1000 units per package.
PackageSOIC
MountingSurface Mount
Power1.25W
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Technical Specifications
Ixys IX2R11S3T/R technical specifications.
General
| Package/Case | SOIC |
| Fall Time | 22ns |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Max Output Current | 2A |
| Max Power Dissipation | 1.25W |
| Max Supply Voltage | 35V |
| Min Supply Voltage | 10V |
| Mount | Surface Mount |
| Number of Drivers | 2 |
| Number of Outputs | 2 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Power Dissipation | 1.25W |
| Propagation Delay | 120ns |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 20ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IX2R11S3T/R Datasheet
Download the complete datasheet for Ixys IX2R11S3T/R to view detailed technical specifications.
No datasheet is available for this part.
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