The IX6R11S3T/R is a dual gate driver IC from Ixys, featuring a package quantity of 1000 units per rail/tube packaging. It operates within a temperature range of -40°C to 125°C and has a maximum power dissipation of 1.25W. With a minimum supply voltage of 10V, this IC is suitable for various applications.
Sign in to ask questions about the Ixys IX6R11S3T/R datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Ixys IX6R11S3T/R technical specifications.
| Package/Case | SOIC |
| Fall Time | 25ns |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 1.25W |
| Min Supply Voltage | 10V |
| Number of Drivers | 2 |
| Number of Outputs | 2 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| RoHS | Compliant |
Download the complete datasheet for Ixys IX6R11S3T/R to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
