The IXA12IF1200PB is a TO-220AB flange mount insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 20A. It operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 85W. The transistor is packaged in a rail/tube package with 50 units per package and is RoHS compliant. The IXA12IF1200PB has a reverse recovery time of 350ns and is not Reach SVHC compliant.
PackageTO-220AB
MountingThrough Hole
Power85W
Quick Jump:
Chat with Datasheet
Sponsored by
Sign in to ask questions about the Ixys IXA12IF1200PB datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Technical Specifications
Ixys IXA12IF1200PB technical specifications.
General
| Package/Case | TO-220AB |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.1V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.1V |
| Height | 16mm |
| Input Type | STANDARD |
| Length | 10.66mm |
| Max Collector Current | 20A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 85W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 85W |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 350ns |
| RoHS Compliant | Yes |
| Width | 4.82mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXA12IF1200PB Datasheet
Download the complete datasheet for Ixys IXA12IF1200PB to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
Product Images
