The IXA12IF1200PB is a TO-220AB flange mount insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 20A. It operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 85W. The transistor is packaged in a rail/tube package with 50 units per package and is RoHS compliant. The IXA12IF1200PB has a reverse recovery time of 350ns and is not Reach SVHC compliant.
PackageTO-220AB
MountingThrough Hole
Power85W
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Technical Specifications
Ixys IXA12IF1200PB technical specifications.
General
| Package/Case | TO-220AB |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.1V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.1V |
| Height | 16mm |
| Input Type | STANDARD |
| Length | 10.66mm |
| Max Collector Current | 20A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 85W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 85W |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 350ns |
| RoHS Compliant | Yes |
| Width | 4.82mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXA12IF1200PB Datasheet
Download the complete datasheet for Ixys IXA12IF1200PB to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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