The IXA20I1200PB is a 1.2kV insulated gate bipolar transistor (IGBT) with a maximum collector current of 38A. It is packaged in a TO-220AB flange mount with a maximum power dissipation of 165W. The device operates over a temperature range of -55°C to 150°C and is RoHS compliant. It is available in a packaging quantity of 50 units per rail/tube.
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Ixys IXA20I1200PB technical specifications.
| Package/Case | TO-220AB |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.1V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.1V |
| Height | 16mm |
| Input Type | STANDARD |
| Length | 10.66mm |
| Max Collector Current | 38A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 165W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 130W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Width | 4.82mm |
| RoHS | Compliant |
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