Ixys
IXA20I1200PB
Insulated Gate Bipolar Transistor, 33A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3
PackageTO-220AB
MountingThrough Hole
Power130W
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Technical Specifications
Ixys IXA20I1200PB technical specifications.
General
Package/Case
TO-220AB
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Saturation Voltage
2.1V
Collector Emitter Voltage (VCEO)
1.2kV
Collector-emitter Voltage-Max
2.1V
Height
16mm
Input Type
STANDARD
Length
10.66mm
Max Collector Current
38A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
165W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Power Dissipation
130W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Width
4.82mm
Compliance
RoHS
Compliant
Datasheet
Ixys IXA20I1200PB Datasheet
Download the complete datasheet for Ixys IXA20I1200PB to view detailed technical specifications.
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