The IXA20IF1200HB is a high-power insulated gate bipolar transistor (IGBT) with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 38A. It is packaged in a TO-247-3 flange mount package and is suitable for high-power applications. The device has a maximum power dissipation of 165W and operates over a temperature range of -55°C to 150°C. The IXA20IF1200HB is RoHS compliant and is available in quantities of 30 per rail/Tube packaging.
PackageTO-247-3
MountingThrough Hole
Power165W
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Technical Specifications
Ixys IXA20IF1200HB technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 1.8V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.1V |
| Height | 21.46mm |
| Input Type | STANDARD |
| Length | 16.26mm |
| Max Collector Current | 38A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 165W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 165W |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 350ns |
| RoHS Compliant | Yes |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXA20IF1200HB Datasheet
Download the complete datasheet for Ixys IXA20IF1200HB to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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