The IXA30RG1200DHGLB is a surface-mount insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 43A. It has a maximum power dissipation of 147W and operates within a temperature range of -55°C to 150°C. The device is packaged in a tray with 45 units per package and is suitable for use in high-power applications.
PackageSMD/SMT
MountingSurface Mount
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Technical Specifications
Ixys IXA30RG1200DHGLB technical specifications.
General
| Package/Case | SMD/SMT |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector-emitter Voltage-Max | 2.1V |
| Height | 5.5mm |
| Input Type | STANDARD |
| Length | 25mm |
| Max Collector Current | 43A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 147W |
| Mount | Surface Mount |
| Package Quantity | 45 |
| Packaging | Tray |
| Series | IXA30RG1200DHGLB |
| Width | 23mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXA30RG1200DHGLB Datasheet
Download the complete datasheet for Ixys IXA30RG1200DHGLB to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.