The IXA37IF1200HJ is an insulated gate bipolar transistor from Ixys with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 58A. It has a maximum power dissipation of 195W and is packaged in a TO-247AD case with a through-hole mount. The transistor operates within a temperature range of -55°C to 150°C and is compliant with RoHS regulations. The IXA37IF1200HJ has a reverse recovery time of 350ns.
Sign in to ask questions about the Ixys IXA37IF1200HJ datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Ixys IXA37IF1200HJ technical specifications.
| Package/Case | TO-247AD |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.1V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.1V |
| Height | 21.34mm |
| Input Type | STANDARD |
| Length | 16.13mm |
| Max Collector Current | 58A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 195W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 195W |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 350ns |
| RoHS Compliant | Yes |
| Width | 5.21mm |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXA37IF1200HJ to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
