The IXA37IF1200HJ is an insulated gate bipolar transistor from Ixys with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 58A. It has a maximum power dissipation of 195W and is packaged in a TO-247AD case with a through-hole mount. The transistor operates within a temperature range of -55°C to 150°C and is compliant with RoHS regulations. The IXA37IF1200HJ has a reverse recovery time of 350ns.
PackageTO-247AD
MountingThrough Hole
Power195W
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Technical Specifications
Ixys IXA37IF1200HJ technical specifications.
General
| Package/Case | TO-247AD |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.1V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.1V |
| Height | 21.34mm |
| Input Type | STANDARD |
| Length | 16.13mm |
| Max Collector Current | 58A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 195W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 195W |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 350ns |
| RoHS Compliant | Yes |
| Width | 5.21mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXA37IF1200HJ Datasheet
Download the complete datasheet for Ixys IXA37IF1200HJ to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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