The IXA4IF1200TC is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 9A. It is packaged in a TO-268AA surface mount package and has a maximum power dissipation of 45W. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. The IXA4IF1200TC is suitable for high-power applications requiring a high current and voltage rating.
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Ixys IXA4IF1200TC technical specifications.
| Package/Case | TO-268AA |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 1.8V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.1V |
| Height | 5.1mm |
| Input Type | STANDARD |
| Length | 16.05mm |
| Max Collector Current | 9A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Surface Mount |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 45W |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 350ns |
| RoHS Compliant | Yes |
| Width | 14mm |
| RoHS | Compliant |
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