The IXA4IF1200UC is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 9A. It has a maximum power dissipation of 45W and a reverse recovery time of 350ns. The device is packaged in a TO-252-3 package and is mounted on the surface. It is RoHS compliant and available in quantities of 2500 per reel.
PackageTO-252-3
MountingSurface Mount
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Technical Specifications
Ixys IXA4IF1200UC technical specifications.
General
| Package/Case | TO-252-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector-emitter Voltage-Max | 2.1V |
| Input Type | STANDARD |
| Max Collector Current | 9A |
| Max Power Dissipation | 45W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Reverse Recovery Time | 350ns |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXA4IF1200UC Datasheet
Download the complete datasheet for Ixys IXA4IF1200UC to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.