Ixys
IXBF20N300
Insulated Gate Bipolar Transistor, 27A I(C), 3000V V(BR)CES, N-Channel, PLASTIC, ISOPLUS, I4PAK-3
MountingThrough Hole
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Technical Specifications
Ixys IXBF20N300 technical specifications.
General
| Collector Emitter Breakdown Voltage | 3kV |
| Collector-emitter Voltage-Max | 3.2V |
| Input Type | STANDARD |
| Max Collector Current | 27A |
| Max Power Dissipation | 110W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 1.35us |
| RoHS Compliant | Yes |
| Series | BIMOSFET™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXBF20N300 Datasheet
Download the complete datasheet for Ixys IXBF20N300 to view detailed technical specifications.
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