High-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. Features a robust 360V collector-emitter voltage rating and a continuous collector current capability of 20A. Optimized for efficient switching with low on-state voltage drop and fast switching speeds. Ideal for use in power supplies, motor drives, and inverters requiring reliable and efficient power conversion.
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| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Ixys IXBF20N360 to view detailed technical specifications.
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