High-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. Features a robust 360V collector-emitter voltage rating and a continuous collector current capability of 20A. Optimized for efficient switching with low on-state voltage drop and fast switching speeds. Ideal for use in power supplies, motor drives, and inverters requiring reliable and efficient power conversion.
Quick Jump:
Technical Specifications
Ixys IXBF20N360 technical specifications.
Compliance
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Ixys IXBF20N360 Datasheet
Download the complete datasheet for Ixys IXBF20N360 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.