Ixys
IXBF32N300
Insulated Gate Bipolar Transistor, 40A I(C), 3000V V(BR)CES, N-Channel, ISOPLUS, I4PAC-3
MountingThrough Hole
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Technical Specifications
Ixys IXBF32N300 technical specifications.
General
Collector Emitter Breakdown Voltage
3kV
Collector-emitter Voltage-Max
3.2V
Input Type
STANDARD
Max Collector Current
40A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
160W
Mount
Through Hole
Packaging
Rail/Tube
Reverse Recovery Time
1.5us
RoHS Compliant
Yes
Series
BIMOSFET™
Compliance
RoHS
Compliant
Datasheet
Ixys IXBF32N300 Datasheet
Download the complete datasheet for Ixys IXBF32N300 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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