N-Channel Insulated Gate Bipolar Transistor (IGBT) featuring a 1700V Collector-Emitter Breakdown Voltage and a 80A Maximum Collector Current. This through-hole component is housed in a TO-247 plastic package, offering a 1.7kV DC Rated Voltage and a 360W Maximum Power Dissipation. Designed for demanding applications, it boasts a 75A current rating, 150°C maximum operating temperature, and fast switching characteristics with a 45ns turn-on delay time. This RoHS compliant and lead-free device is supplied in bulk packaging.
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| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 1.7kV |
| Collector Emitter Voltage (VCEO) | 1.7kV |
| Collector-emitter Voltage-Max | 2.8V |
| Current Rating | 75A |
| Height | 21.46mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 16.26mm |
| Max Collector Current | 80A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Bulk |
| Reverse Recovery Time | 1.32us |
| RoHS Compliant | Yes |
| Series | BIMOSFET™ |
| Turn-Off Delay Time | 365ns |
| Turn-On Delay Time | 45ns |
| DC Rated Voltage | 1.7kV |
| Weight | 0.229281oz |
| Width | 5.3mm |
| RoHS | Compliant |
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