The IXBH42N170A is a high-power insulated gate bipolar transistor (IGBT) with a collector-emitter breakdown voltage of 1.7kV and a maximum collector current of 42A. It is packaged in a TO-247-3 plastic package and is suitable for through-hole mounting. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. The IXBH42N170A is suitable for high-power applications such as motor drives and power supplies.
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| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 1.7kV |
| Collector Emitter Saturation Voltage | 5.2V |
| Collector Emitter Voltage (VCEO) | 1.7kV |
| Collector-emitter Voltage-Max | 6V |
| Input Type | STANDARD |
| Max Collector Current | 42A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 357W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 330ns |
| RoHS Compliant | Yes |
| Series | BIMOSFET™ |
| Weight | 0.229281oz |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXBH42N170A to view detailed technical specifications.
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