The IXBH6N170 is a 1.7kV insulated gate bipolar transistor (IGBT) with a maximum collector current of 12A and a maximum power dissipation of 75W. It is packaged in a TO-247AD plastic package and is suitable for through-hole mounting. The IGBT has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It is lead-free and RoHS compliant.
PackageTO-247AD
MountingThrough Hole
Quick Jump:
Chat with Datasheet
Sponsored by
Sign in to ask questions about the Ixys IXBH6N170 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Technical Specifications
Ixys IXBH6N170 technical specifications.
General
| Package/Case | TO-247AD |
| Collector Emitter Breakdown Voltage | 1.7kV |
| Collector Emitter Saturation Voltage | 2.3V |
| Collector Emitter Voltage (VCEO) | 1.7kV |
| Collector-emitter Voltage-Max | 3.4V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 12A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reverse Recovery Time | 1.08us |
| RoHS Compliant | Yes |
| Series | BIMOSFET™ |
| Weight | 0.229281oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXBH6N170 Datasheet
Download the complete datasheet for Ixys IXBH6N170 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
Product Images
