The IXBN42N170A is a high-power insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.7kV and a maximum collector current of 42A. It is packaged in a SOT-227-4 package and is suitable for chassis mount applications. The transistor has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It is RoHS compliant and available in a rail/tube packaging configuration.
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| Package/Case | SOT-227-4 |
| Collector Emitter Breakdown Voltage | 1.7kV |
| Collector Emitter Voltage (VCEO) | 1.7kV |
| Collector-emitter Voltage-Max | 6V |
| Input | Standard |
| Input Capacitance | 3.5nF |
| Max Collector Current | 42A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 312W |
| Mount | Chassis Mount, Screw |
| NTC Thermistor | No |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | BIMOSFET™ |
| RoHS | Compliant |
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