N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high voltage applications. Features a collector current rating of 30A and a collector-emitter breakdown voltage of 3000V. Maximum operating temperature reaches 150°C, ensuring reliable performance in demanding environments.
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Technical Specifications
Ixys IXBT12N300HV technical specifications.
General
| Max Operating Temperature | 150 |
Compliance
| RoHS | Yes |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Ixys IXBT12N300HV Datasheet
Download the complete datasheet for Ixys IXBT12N300HV to view detailed technical specifications.
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