The IXBT42N170A is a high-power insulated gate bipolar transistor from Ixys with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 42A. It is packaged in a TO-268-3 plastic package and is suitable for through hole and surface mount applications. The transistor operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. The IXBT42N170A is part of the BIMOSFET series and features a reverse recovery time of 330ns.
PackageTO-268-3
MountingThrough Hole, Surface Mount
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Technical Specifications
Ixys IXBT42N170A technical specifications.
General
| Package/Case | TO-268-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 5.2V |
| Collector Emitter Voltage (VCEO) | 1.7kV |
| Collector-emitter Voltage-Max | 6V |
| Input Type | STANDARD |
| Max Breakdown Voltage | 1.7kV |
| Max Collector Current | 42A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 357W |
| Mount | Through Hole, Surface Mount |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 330ns |
| RoHS Compliant | Yes |
| Series | BIMOSFET™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXBT42N170A Datasheet
Download the complete datasheet for Ixys IXBT42N170A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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