N-Channel Insulated Gate Bipolar Transistor (IGBT) with a 2500V Collector-Emitter Breakdown Voltage and 55A Max Collector Current. Features a 3.3V Collector-Emitter Voltage-Max and 300W Max Power Dissipation. Operates across a wide temperature range from -55°C to 150°C. Packaged in a TO-247-3 (PLUS247) through-hole mount configuration. This RoHS compliant component offers a 1.6µs reverse recovery time.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Ixys IXBX25N250 technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 2.5kV |
| Collector-emitter Voltage-Max | 3.3V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 55A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 1.6us |
| RoHS Compliant | Yes |
| Series | BIMOSFET™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXBX25N250 Datasheet
Download the complete datasheet for Ixys IXBX25N250 to view detailed technical specifications.
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