Power Field-Effect Transistor, 900V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC PACKAGE-3
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Ixys IXCY01N90E technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 250mA |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 80R |
| Drain to Source Voltage (Vdss) | 900V |
| Input Capacitance | 133pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 40W |
| Rds On Max | 80R |
| RoHS Compliant | No |
| Turn-Off Delay Time | 61ns |
| RoHS | Not Compliant |
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