The IXDH20N120D1 is an insulated gate bipolar transistor from Ixys with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 38A. It is packaged in a TO-247AD package and is designed for through-hole mounting. The device operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 200W. The IXDH20N120D1 is compliant with RoHS regulations.
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Ixys IXDH20N120D1 technical specifications.
| Package/Case | TO-247AD |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.4V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 3V |
| Height | 21.46mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 16.26mm |
| Max Collector Current | 38A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 200W |
| RoHS Compliant | Yes |
| Series | IXDH20N120 |
| Weight | 0.229281oz |
| Width | 5.3mm |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXDH20N120D1 to view detailed technical specifications.
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