The IXDH35N60B is a 600V insulated gate bipolar transistor with a maximum collector current of 60A. It features a TO-247-3 flange mount package and is rated for a maximum power dissipation of 250W. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. It is suitable for use in high-power applications requiring high current and voltage handling.
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Ixys IXDH35N60B technical specifications.
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.1V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.7V |
| Input Type | STANDARD |
| Max Collector Current | 60A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Weight | 0.229281oz |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXDH35N60B to view detailed technical specifications.
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