N-channel IGBT power module featuring 1200V collector-emitter breakdown voltage and 100A maximum collector current. This module offers a low 2.3V collector-emitter saturation voltage and 450W maximum power dissipation. Designed for chassis or surface mounting with a SOT-227-4 package, it operates from -40°C to 150°C and includes a 3.3nF input capacitance. RoHS compliant and lead-free.
PackageSOT-227-4
MountingChassis Mount, Surface Mount, Screw
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Technical Specifications
Ixys IXDN55N120D1 technical specifications.
General
| Package/Case | SOT-227-4 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.3V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.8V |
| Height | 9.6mm |
| Input | Standard |
| Input Capacitance | 3.3nF |
| Lead Free | Lead Free |
| Length | 38.2mm |
| Max Collector Current | 100A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 450W |
| Mount | Chassis Mount, Surface Mount, Screw |
| NTC Thermistor | No |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 500ns |
| Turn-On Delay Time | 100ns |
| Weight | 1.340411oz |
| Width | 25.07mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXDN55N120D1 Datasheet
Download the complete datasheet for Ixys IXDN55N120D1 to view detailed technical specifications.
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