N-channel IGBT power module featuring 1200V collector-emitter breakdown voltage and 100A maximum collector current. This module offers a low 2.3V collector-emitter saturation voltage and 450W maximum power dissipation. Designed for chassis or surface mounting with a SOT-227-4 package, it operates from -40°C to 150°C and includes a 3.3nF input capacitance. RoHS compliant and lead-free.
PackageSOT-227-4
MountingChassis Mount, Surface Mount, Screw
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Technical Specifications
Ixys IXDN55N120D1 technical specifications.
General
Package/Case
SOT-227-4
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Saturation Voltage
2.3V
Collector Emitter Voltage (VCEO)
1.2kV
Collector-emitter Voltage-Max
2.8V
Height
9.6mm
Input
Standard
Input Capacitance
3.3nF
Lead Free
Lead Free
Length
38.2mm
Max Collector Current
100A
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
450W
Mount
Chassis Mount, Surface Mount, Screw
NTC Thermistor
No
Package Quantity
10
Packaging
Rail/Tube
Radiation Hardening
No
RoHS Compliant
Yes
Turn-Off Delay Time
500ns
Turn-On Delay Time
100ns
Weight
1.340411oz
Width
25.07mm
Compliance
RoHS
Compliant
Datasheet
Ixys IXDN55N120D1 Datasheet
Download the complete datasheet for Ixys IXDN55N120D1 to view detailed technical specifications.
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