
N-channel IGBT power module featuring 1200V collector-emitter breakdown voltage and 100A maximum collector current. This module offers a low 2.3V collector-emitter saturation voltage and 450W maximum power dissipation. Designed for chassis or surface mounting with a SOT-227-4 package, it operates from -40°C to 150°C and includes a 3.3nF input capacitance. RoHS compliant and lead-free.
Ixys IXDN55N120D1 technical specifications.
Download the complete datasheet for Ixys IXDN55N120D1 to view detailed technical specifications.
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