N-channel Insulated Gate Bipolar Transistor (IGBT) for high-power applications. Features a 1200V Collector-Emitter Breakdown Voltage (V(BR)CES) and a maximum collector current of 150A. Offers a low Collector-Emitter Saturation Voltage of 2.2V at 150A. Housed in a SOT-227-4 MINIBLOC-4 package for chassis mounting. Maximum power dissipation is 660W, with an operating temperature range of -40°C to 150°C. RoHS compliant and lead-free.
PackageSOT-227-4
MountingChassis Mount, Screw
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Technical Specifications
Ixys IXDN75N120 technical specifications.
General
| Package/Case | SOT-227-4 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.2V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.7V |
| Input | Standard |
| Input Capacitance | 5.5nF |
| Lead Free | Lead Free |
| Max Collector Current | 150A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 660W |
| Mount | Chassis Mount, Screw |
| NTC Thermistor | No |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Weight | 1.340411oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXDN75N120 Datasheet
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