The IXDP20N60BD1 is a 600V insulated gate bipolar transistor (IGBT) with a maximum collector current of 32A. It is packaged in a TO-220AB, 3 PIN package and is RoHS compliant. The transistor has a maximum power dissipation of 140W and operates over a temperature range of -55°C to 150°C. It is suitable for use in high-power applications such as motor drives and power supplies.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Ixys IXDP20N60BD1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Ixys IXDP20N60BD1 technical specifications.
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.2V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.8V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 32A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 140W |
| RoHS Compliant | Yes |
| Series | IXDP20N60B |
| Weight | 0.08113oz |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXDP20N60BD1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
