The IXDP20N60BD1 is a 600V insulated gate bipolar transistor (IGBT) with a maximum collector current of 32A. It is packaged in a TO-220AB, 3 PIN package and is RoHS compliant. The transistor has a maximum power dissipation of 140W and operates over a temperature range of -55°C to 150°C. It is suitable for use in high-power applications such as motor drives and power supplies.
PackageTO-220-3
MountingThrough Hole
Power140W
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Technical Specifications
Ixys IXDP20N60BD1 technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.2V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.8V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 32A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 140W |
| RoHS Compliant | Yes |
| Series | IXDP20N60B |
| Weight | 0.08113oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXDP20N60BD1 Datasheet
Download the complete datasheet for Ixys IXDP20N60BD1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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