Power Field-Effect Transistor, 16A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263AA, 3 PIN
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Ixys IXFA16N60P3 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Voltage (Vdss) | 600V |
| Input Capacitance | 1.83nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 347W |
| Mount | Surface Mount |
| Rds On Max | 440mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, Polar3™ |
| RoHS | Compliant |
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