Ixys
IXFA3N120
Power Field-Effect Transistor, 3A I(D), 1200V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN
PackageTO-263
MountingSurface Mount
PolarityN-CHANNEL
Power200W
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Technical Specifications
Ixys IXFA3N120 technical specifications.
General
Package/Case
TO-263
Continuous Drain Current (ID)
3A
Drain to Source Breakdown Voltage
1.2kV
Drain to Source Resistance
4.5R
Drain to Source Voltage (Vdss)
1.2kV
Fall Time
18ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.05nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Surface Mount
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
200W
Radiation Hardening
No
Rds On Max
4.5R
RoHS Compliant
Yes
Series
HiPerFET™
Turn-Off Delay Time
32ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXFA3N120 Datasheet
Download the complete datasheet for Ixys IXFA3N120 to view detailed technical specifications.
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