Power Field-Effect Transistor, 4A I(D), 1000V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN
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| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | 1kV |
| Drain-source On Resistance-Max | 3.3R |
| Input Capacitance | 1.456nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Rds On Max | 3.3R |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarP2™ |
| RoHS | Compliant |
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