IXFA4N100P

Name: IXFA4N100P Ixys
Brand: Ixys
SKU: IXFA4N100P

Power Field-Effect Transistor, 4A I(D), 1000V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN

PackageTO-263-3

MountingSurface Mount

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Ixys IXFA4N100P technical specifications.

Package/Case	TO-263-3
Continuous Drain Current (ID)	4A
Drain to Source Voltage (Vdss)	1kV
Drain-source On Resistance-Max	3.3R
Input Capacitance	1.456nF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	150W
Mount	Surface Mount
Package Quantity	50
Packaging	Rail/Tube
Rds On Max	3.3R
RoHS Compliant	Yes
Series	HiPerFET™, PolarP2™

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.