Ixys
IXFA4N100QSN
Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3/2
Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3/2
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Technical Specifications
Ixys IXFA4N100QSN technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Number of Elements | 1 |
Compliance
| REACH | Compliant |
| Military Spec | False |
Datasheet
Ixys IXFA4N100QSN Datasheet
Download the complete datasheet for Ixys IXFA4N100QSN to view detailed technical specifications.
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