Ixys
IXFA7N80P
Power Field-Effect Transistor, 7A I(D), 800V, 1.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
Power Field-Effect Transistor, 7A I(D), 800V, 1.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
PackageTO-263
MountingSurface Mount
PolarityN-CHANNEL
Power200W
Quick Jump:
Chat with Datasheet
Sponsored by
Sign in to ask questions about the Ixys IXFA7N80P datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Technical Specifications
Ixys IXFA7N80P technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 1.4R |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.89nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| Rds On Max | 1.44R |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Turn-Off Delay Time | 55ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFA7N80P Datasheet
Download the complete datasheet for Ixys IXFA7N80P to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
Product Images
