Ixys
IXFA7N80P
Power Field-Effect Transistor, 7A I(D), 800V, 1.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
PackageTO-263
MountingSurface Mount
PolarityN-CHANNEL
Power200W
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Technical Specifications
Ixys IXFA7N80P technical specifications.
General
Package/Case
TO-263
Continuous Drain Current (ID)
7A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
1.4R
Drain to Source Voltage (Vdss)
800V
Fall Time
24ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
1.89nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Surface Mount
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
200W
Radiation Hardening
No
Rds On Max
1.44R
RoHS Compliant
Yes
Series
HiPerFET™, PolarHT™
Turn-Off Delay Time
55ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXFA7N80P Datasheet
Download the complete datasheet for Ixys IXFA7N80P to view detailed technical specifications.
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