IXFB100N50Q3

N-Channel Power MOSFET, 500V Drain-Source Breakdown Voltage, 100A Continuous Drain Current, and 49mΩ Max Drain-Source On-Resistance. Features a 1.56kW Max Power Dissipation, 150°C Max Operating Temperature, and 30V Gate-to-Source Voltage. This silicon Metal-Oxide-Semiconductor FET is housed in a TO-264-3 plastic package with through-hole mounting. Includes 40ns Turn-On Delay Time and 50ns Turn-Off Delay Time.