N-Channel Power MOSFET, 500V Drain-Source Breakdown Voltage, 100A Continuous Drain Current, and 49mΩ Max Drain-Source On-Resistance. Features a 1.56kW Max Power Dissipation, 150°C Max Operating Temperature, and 30V Gate-to-Source Voltage. This silicon Metal-Oxide-Semiconductor FET is housed in a TO-264-3 plastic package with through-hole mounting. Includes 40ns Turn-On Delay Time and 50ns Turn-Off Delay Time.
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| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 49mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 49MR |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 26.59mm |
| Input Capacitance | 13.8nF |
| Lead Free | Lead Free |
| Length | 20.29mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.56kW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.56kW |
| Radiation Hardening | No |
| Rds On Max | 49mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 40ns |
| Width | 5.31mm |
| RoHS | Compliant |
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