IXFB132N50P3

500V 132A N-Channel MOSFET, 39mR Rds(on)

N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 132A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 39mΩ drain-to-source resistance. Designed for through-hole mounting in a TO-264-3 package, it boasts a maximum power dissipation of 1.89kW and operates within a temperature range of -55°C to 150°C. Key switching characteristics include an 8ns fall time, 44ns turn-on delay, and 72ns turn-off delay.

PackageTO-264-3

MountingThrough Hole

PolarityN-CHANNEL

Power1.89kW

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Technical Specifications

Ixys IXFB132N50P3 technical specifications.

General

Package/Case	TO-264-3
Continuous Drain Current (ID)	132A
Drain to Source Breakdown Voltage	500V
Drain to Source Resistance	39mR
Drain to Source Voltage (Vdss)	500V
Fall Time	8ns
Gate to Source Voltage (Vgs)	30V
Height	26.59mm
Input Capacitance	18.6nF
Lead Free	Lead Free
Length	20.29mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	1.89kW
Mount	Through Hole
Package Quantity	25
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	1.89kW
Rds On Max	39mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	HiPerFET™, Polar3™
Threshold Voltage	5V
Turn-Off Delay Time	72ns
Turn-On Delay Time	44ns
Width	5.31mm