N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 132A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 39mΩ drain-to-source resistance. Designed for through-hole mounting in a TO-264-3 package, it boasts a maximum power dissipation of 1.89kW and operates within a temperature range of -55°C to 150°C. Key switching characteristics include an 8ns fall time, 44ns turn-on delay, and 72ns turn-off delay.
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Ixys IXFB132N50P3 technical specifications.
| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 132A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 39mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 26.59mm |
| Input Capacitance | 18.6nF |
| Lead Free | Lead Free |
| Length | 20.29mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.89kW |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.89kW |
| Rds On Max | 39mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™, Polar3™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 72ns |
| Turn-On Delay Time | 44ns |
| Width | 5.31mm |
| RoHS | Compliant |
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