N-Channel Power MOSFET, 800V Vdss, 60A continuous drain current, and 140mΩ Rds On. Features a 1.25kW maximum power dissipation and operates across a -55°C to 150°C temperature range. This silicon, metal-oxide semiconductor FET is housed in a TO-264 plastic package with through-hole mounting. Includes a 26ns fall time and 110ns turn-off delay time.
PackageTO-264-3
MountingThrough Hole
PolarityN-CHANNEL
Power1.25kW
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Technical Specifications
Ixys IXFB60N80P technical specifications.
General
| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 140mR |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 140MR |
| Fall Time | 26ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 18nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25kW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.25kW |
| Radiation Hardening | No |
| Rds On Max | 140mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Turn-Off Delay Time | 110ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFB60N80P Datasheet
Download the complete datasheet for Ixys IXFB60N80P to view detailed technical specifications.
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