N-channel silicon power MOSFET featuring 800V drain-to-source breakdown voltage and 62A continuous drain current. This through-hole component offers a low 140mΩ drain-to-source resistance and a maximum power dissipation of 1.56kW. Designed with a 1-element configuration, it operates within a temperature range of -55°C to 150°C and includes a 30V gate-to-source voltage rating. The device is RoHS compliant and packaged for through-hole mounting.
PackageTO-264-3
MountingThrough Hole
PolarityN-CHANNEL
Power1.56kW
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Technical Specifications
Ixys IXFB62N80Q3 technical specifications.
General
| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 62A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 140mR |
| Drain to Source Voltage (Vdss) | 800V |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 26.59mm |
| Input Capacitance | 13.6nF |
| Lead Free | Lead Free |
| Length | 20.29mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.56kW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.56kW |
| Radiation Hardening | No |
| Rds On Max | 140mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 62ns |
| Turn-On Delay Time | 54ns |
| Width | 5.31mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFB62N80Q3 Datasheet
Download the complete datasheet for Ixys IXFB62N80Q3 to view detailed technical specifications.
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