N-Channel Power MOSFET featuring 500V Drain-Source Voltage (Vdss) and 80A Continuous Drain Current (ID). This silicon, metal-oxide semiconductor FET offers a low 60mΩ Drain-Source On Resistance (Rds On Max) and a maximum power dissipation of 960W. Designed for through-hole mounting in a TO-264-3 package, it operates within a temperature range of -55°C to 150°C and includes a 15nF input capacitance. The component boasts a 11ns fall time and 60ns turn-off delay time, with RoHS compliance and lead-free construction.
PackageTO-264-3
MountingThrough Hole
PolarityN-CHANNEL
Power960W
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Technical Specifications
Ixys IXFB80N50Q2 technical specifications.
General
| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 60mR |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 15nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 960W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 960W |
| Radiation Hardening | No |
| Rds On Max | 60mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 60ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFB80N50Q2 Datasheet
Download the complete datasheet for Ixys IXFB80N50Q2 to view detailed technical specifications.
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