The IXFB82N60P is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 600V, a continuous drain current of 82A, and a drain to source resistance of 750mR. The device is packaged in a TO-264-3 package and is mounted through a hole. It is RoHS compliant and lead free.
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| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 82A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 750mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 23nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25kW |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.25kW |
| Rds On Max | 75mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Turn-Off Delay Time | 79ns |
| RoHS | Compliant |
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