Power Field-Effect Transistor, 5A I(D), 800V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS220SMD, 3 PIN
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Ixys IXFC10N80P technical specifications.
| Continuous Drain Current (ID) | 5A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 800V |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| RoHS Compliant | Yes |
| Series | PolarHV™ |
| RoHS | Compliant |
