The IXFC15N80Q is a high-power N-CHANNEL MOSFET from Ixys, featuring a breakdown voltage of 800V and a continuous drain current of 13A. It has a maximum power dissipation of 230W and can operate in temperatures ranging from -40°C to 150°C. The device is packaged in a through-hole package and is compliant with RoHS regulations.
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Ixys IXFC15N80Q technical specifications.
| Continuous Drain Current (ID) | 13A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 650mR |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.3nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 230W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 230W |
| Rds On Max | 650mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 53ns |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXFC15N80Q to view detailed technical specifications.
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