The IXFC36N50P is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 156W and a drain to source breakdown voltage of 500V. The device is lead free and RoHS compliant, packaged in a 3-pin ISOPLUS220 package, and available in quantities of 50. It is suitable for high-power applications requiring high current and voltage ratings.
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Ixys IXFC36N50P technical specifications.
| Continuous Drain Current (ID) | 19A |
| Current Rating | 36A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 190mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 23ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 5.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 156W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 156W |
| Rds On Max | 190mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Turn-Off Delay Time | 82ns |
| DC Rated Voltage | 500V |
| RoHS | Compliant |
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