The IXFC80N085 is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 85V and a continuous drain current of 80A. The device has a maximum power dissipation of 230W and a drain to source resistance of 11mR. It is packaged in a through-hole package and is RoHS compliant.
MountingThrough Hole
PolarityN-CHANNEL
Power230W
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Technical Specifications
Ixys IXFC80N085 technical specifications.
General
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 85V |
| Drain to Source Resistance | 11mR |
| Drain to Source Voltage (Vdss) | 85V |
| Fall Time | 31ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.8nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 230W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 230W |
| Rds On Max | 11mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 95ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFC80N085 Datasheet
Download the complete datasheet for Ixys IXFC80N085 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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