Ixys
IXFE23N100
Power Field-Effect Transistor, 21A I(D), 1000V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS227, 4 PIN
Power Field-Effect Transistor, 21A I(D), 1000V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS227, 4 PIN
PackageSOT-227-4
MountingChassis Mount
PolarityN-CHANNEL
Power500W
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Technical Specifications
Ixys IXFE23N100 technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 430mR |
| Drain to Source Voltage (Vdss) | 1kV |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 7nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500W |
| Mount | Chassis Mount |
| Package Quantity | 1 |
| Packaging | Box |
| Polarity | N-CHANNEL |
| Power Dissipation | 500W |
| Rds On Max | 430mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 75ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFE23N100 Datasheet
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