The IXFE39N90 is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -40°C. It features a drain to source breakdown voltage of 900V and a continuous drain current of 34A. The device is packaged in a SOT-227-4 flange mount package and is RoHS compliant. It has a maximum power dissipation of 580W and a gate to source voltage of 20V.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Ixys IXFE39N90 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 34A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 220mR |
| Drain to Source Voltage (Vdss) | 900V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 13.4nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 580W |
| Mount | Chassis Mount |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 580W |
| Rds On Max | 220mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 125ns |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXFE39N90 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
