The IXFE73N30Q is a high-power N-channel transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 300V and a continuous drain current of 66A. The device has a maximum power dissipation of 400W and is packaged in a SOT-227-4 case, suitable for chassis mount applications. The IXFE73N30Q is RoHS compliant and part of the HiPerFET series.
PackageSOT-227-4
MountingChassis Mount
PolarityN-CHANNEL
Power400W
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Technical Specifications
Ixys IXFE73N30Q technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 66A |
| Drain to Source Breakdown Voltage | 300V |
| Drain to Source Resistance | 46mR |
| Drain to Source Voltage (Vdss) | 300V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6.4nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400W |
| Mount | Chassis Mount |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 400W |
| Rds On Max | 46mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 82ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFE73N30Q Datasheet
Download the complete datasheet for Ixys IXFE73N30Q to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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