N-channel silicon MOSFET featuring 1000V drain-source breakdown voltage and 10A continuous drain current. This power field-effect transistor offers a low 1.2 ohm drain-source resistance (Rds On Max) and a maximum power dissipation of 300W. Designed for through-hole mounting in a TO-247AD package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 32ns fall time and 62ns turn-off delay time.
PackageTO-247AD
Current Rating10A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFH10N100 technical specifications.
General
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 10A |
| Current Rating | 10A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 1kV |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 1.2R |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 62ns |
| DC Rated Voltage | 1kV |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH10N100 Datasheet
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