N-Channel Power MOSFET featuring 100V drain-to-source breakdown voltage and 110A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 15mΩ drain-to-source resistance. Designed for through-hole mounting in a TO-247 package, it boasts a maximum power dissipation of 480W and operates within a temperature range of -55°C to 175°C. Key switching characteristics include a 21ns turn-on delay and a 25ns fall time.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power480W
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Technical Specifications
Ixys IXFH110N10P technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 110A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 15mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 21.46mm |
| Input Capacitance | 3.55nF |
| Length | 16.26mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 480W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Box |
| Polarity | N-CHANNEL |
| Power Dissipation | 480W |
| Radiation Hardening | No |
| Rds On Max | 15mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PolarHT™ HiPerFET™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 21ns |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH110N10P Datasheet
Download the complete datasheet for Ixys IXFH110N10P to view detailed technical specifications.
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