N-Channel Power MOSFET featuring 900V drain-source breakdown voltage and 12A continuous drain current. This silicon, metal-oxide semiconductor FET offers a maximum on-resistance of 900mΩ and a power dissipation of 300W. Designed for through-hole mounting in a TO-247AD package, it operates across a temperature range of -55°C to 150°C. Key specifications include a 4.2nF input capacitance, 18ns fall time, and 51ns turn-off delay time.
PackageTO-247AD
Current Rating12A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFH12N90 technical specifications.
General
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 12A |
| Current Rating | 12A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 1.1R |
| Drain to Source Voltage (Vdss) | 900V |
| Drain-source On Resistance-Max | 900mR |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 900mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 51ns |
| DC Rated Voltage | 900V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH12N90 Datasheet
Download the complete datasheet for Ixys IXFH12N90 to view detailed technical specifications.
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