N-Channel Power MOSFET, 800V Drain-Source Voltage (Vdss) and 13A Continuous Drain Current (ID). Features 800mR maximum Drain-Source On-Resistance (Rds On) and 300W maximum Power Dissipation. This silicon Metal-oxide Semiconductor FET is housed in a TO-247AD package for through-hole mounting. Operates from -55°C to 150°C, with a Gate-Source Voltage (Vgs) of 20V.
PackageTO-247AD
Current Rating13A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFH13N80 technical specifications.
General
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 13A |
| Current Rating | 13A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 800mR |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 800mR |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 800mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 63ns |
| DC Rated Voltage | 800V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH13N80 Datasheet
Download the complete datasheet for Ixys IXFH13N80 to view detailed technical specifications.
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