N-channel silicon MOSFET, 1000V drain-source breakdown voltage, 14A continuous drain current, and 950mΩ maximum drain-source on-resistance. This single-element FET features a TO-247AD package, 500W maximum power dissipation, and operates within a -55°C to 150°C temperature range. Key switching parameters include a 12ns turn-on delay and 12ns fall time. RoHS compliant and lead-free.
PackageTO-247AD
MountingThrough Hole
PolarityN-CHANNEL
Power500W
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Technical Specifications
Ixys IXFH14N100Q2 technical specifications.
General
Package/Case
TO-247AD
Continuous Drain Current (ID)
14A
Drain to Source Breakdown Voltage
1kV
Drain to Source Resistance
900mR
Drain to Source Voltage (Vdss)
1kV
Drain-source On Resistance-Max
900mR
Dual Supply Voltage
1kV
Fall Time
12ns
Gate to Source Voltage (Vgs)
30V
Height
21.46mm
Input Capacitance
2.8nF
Lead Free
Lead Free
Length
16.26mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500W
Mount
Through Hole
Nominal Vgs
5V
Number of Elements
1
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
500W
Radiation Hardening
No
Rds On Max
950mR
Reach SVHC Compliant
No
Reverse Recovery Time
300ns
RoHS Compliant
Yes
Series
HiPerFET™
Termination
Through Hole
Threshold Voltage
5V
Turn-Off Delay Time
28ns
Turn-On Delay Time
12ns
Weight
6g
Width
5.3mm
Compliance
RoHS
Compliant
Datasheet
Ixys IXFH14N100Q2 Datasheet
Download the complete datasheet for Ixys IXFH14N100Q2 to view detailed technical specifications.
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