N-channel silicon MOSFET, 1000V drain-source breakdown voltage, 14A continuous drain current, and 950mΩ maximum drain-source on-resistance. This single-element FET features a TO-247AD package, 500W maximum power dissipation, and operates within a -55°C to 150°C temperature range. Key switching parameters include a 12ns turn-on delay and 12ns fall time. RoHS compliant and lead-free.
PackageTO-247AD
MountingThrough Hole
PolarityN-CHANNEL
Power500W
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Technical Specifications
Ixys IXFH14N100Q2 technical specifications.
General
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 900mR |
| Drain to Source Voltage (Vdss) | 1kV |
| Drain-source On Resistance-Max | 900mR |
| Dual Supply Voltage | 1kV |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 21.46mm |
| Input Capacitance | 2.8nF |
| Lead Free | Lead Free |
| Length | 16.26mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500W |
| Radiation Hardening | No |
| Rds On Max | 950mR |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 300ns |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Termination | Through Hole |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 12ns |
| Weight | 6g |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH14N100Q2 Datasheet
Download the complete datasheet for Ixys IXFH14N100Q2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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